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SIR158DP-T1-GE3

Name: SIR158DP-T1-GE3
Brand: Vishay
SKU: 324063
Availability: InStock
Rating: 4.93 (48 reviews)

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Part No	SIR158DP-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V 60A PPAK SO-8
Datasheet	SIR158DP-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	2.5V @ 250μA
Max Gate Charge	130nC @ 10V
Max Input Capacitance	4980pF @ 15V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	5.4W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs	1.8 mOhm @ 20A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	PowerPAK SO-8
Dimension	PowerPAK SO-8
Win Source Part Number	028750-SIR158DP-T1-GE3
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian SIR158DP-T1-GE3 CAD Model

Alternative Products

Description

The Vishay SIR158DP-T1-GE3 is a MOSFET designed for high power applications.

Popularity Rating: Medium
Supply and Demand Status: Sufficient
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current @ 25°C: 60A (Tc)
Package: PowerPAK SO-8
Mounting Technology: SMD (SMT)

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
110+	$0.4618	$50.7980
265+	$0.3789	$100.4085
410+	$0.3670	$150.4700
565+	$0.3552	$200.6880
730+	$0.3434	$250.6820
975+	$0.3079	$300.2025

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 54,000 pieces

MOQ: 110 pcs

Order Increment : 1 pcs

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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