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Same model may have multiple batches, images only for reference.
IPS70R600P7SAKMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPS70R600P7SAKMA1

Part No IPS70R600P7SAKMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 700V 20.5A IPAK
Datasheet
IPS70R600P7SAKMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 700V
Continuous Drain Current at 25°C 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 90μA
Max Gate Charge 10.5nC @ 10V
Max Input Capacitance 364pF @ 400V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 43W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 1.8A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO251
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 1006935-IPS70R600P7SAKMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPS70R600P7SAKMA1 CAD Model

Description

The IPS70R600P7SAKMA1 is a highly reliable and efficient N-channel MOSFET from Infineon Technologies.

  • Application: Power Management, Automotive, and Industrial Applications
  • Package: PG-TO251
  • Mounting Type: Through-Hole
  • Maximum Drain-Source Breakdown Voltage: 700V
  • Continuous Drain Current: 8.5A (Tc)
  • Gate-Source Threshold Voltage: 3.5V @ 90μA
  • Maximum Gate Charge: 10.5nC @ 10V
  • Maximum Input Capacitance: 364pF @ 400V
  • Maximum Rds On @ Id,Vgs: 600 mOhm @ 1.8A and 10V
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5378 $59.1580
265+ $0.4414 $116.9710
410+ $0.4275 $175.2750
560+ $0.4137 $231.6720
725+ $0.4000 $290.0000
970+ $0.3585 $347.7450
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Availability: 6,000 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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