The SIR404DP is an N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. It is designed for high-efficiency power switching applications due to its low on-resistance and fast switching speed.

Applications

• DC-DC Converters
• Synchronous Rectification
• Power Supplies
• Motor Control
• Load Switching

Features

• Low On-Resistance (RDS(on))
• High Current Capability
• Fast Switching Speed
• Logic Level Gate Drive
• Avalanche Rated

Benefits

• Improved System Efficiency
• Reduced Power Dissipation
• Simplified Gate Drive Circuitry
• Enhanced System Reliability
• Compact Design

Technical Specifications

The SIR404DP has a drain-source voltage (VDS) rating of 30V and a continuous drain current (ID) rating up to 24A (depending on the case temperature and mounting). The on-resistance (RDS(on)) is typically very low, in the milliohm range, which minimizes conduction losses. The gate threshold voltage (VGS(th)) is typically around 2.5V, making it suitable for logic-level gate drive. The package is typically a PowerPAK SO-8, allowing for efficient heat dissipation. It boasts a fast trr, allowing for more efficient performance. It also operates at up to 175°C.

This MOSFET is well-suited for a variety of power switching applications where efficiency and power density are critical. Its low on-resistance minimizes conduction losses, resulting in cooler operation and higher overall system efficiency. The logic-level gate drive simplifies the design of the gate drive circuitry, reducing component count and cost. The fast switching speed allows for higher frequency operation, which can lead to smaller and more efficient power converters. The avalanche rating ensures that the device can withstand transient voltage spikes, enhancing system reliability. The PowerPAK SO-8 package provides excellent thermal performance, allowing for higher current operation.