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Same model may have multiple batches, images only for reference.
SIR438DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIR438DP-T1-GE3

Part No SIR438DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 60A PPAK SO-8
Datasheet
SIR438DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 250μA
Max Gate Charge 105nC @ 10V
Max Input Capacitance 4560pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5.4W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs 1.8 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028756-SIR438DP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIR438DP-T1-GE3 CAD Model

Description

The Vishay 028756-SIR438DP-T1-GE3 is a N-channel MOSFET semiconductor product that is designed to provide efficient and reliable performance for various electronic applications.

  • Polarity: N-channel
  • Manufacturer: Vishay
  • Popularity: High
  • Supply and Demand Status: Balanced
  • Power Dissipation: 5.4W
  • Continuous Drain Current: 60A

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,900 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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