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SIR472ADP-T1-GE3

Name: SIR472ADP-T1-GE3
Brand: Vishay
SKU: 324095
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SIR472ADP-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V 18A PPAK SO-8
Datasheet	SIR472ADP-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	2.3V @ 250μA
Max Gate Charge	28nC @ 10V
Max Input Capacitance	1040pF @ 15V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	3.3W (Ta), 14.7W (Tc)
Maximum Rds On at Id,Vgs	9 mOhm @ 15A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	PowerPAK SO-8
Dimension	PowerPAK SO-8
Win Source Part Number	064661-SIR472ADP-T1-GE3
Popularity	Medium
Supply and Demand Status	Limited
Application Field	Used in Industrial, Power Management
Ultra Librarian 3D Model	Ultra Librarian SIR472ADP-T1-GE3 CAD Model

Alternative Products

Description

The Vishay 064661-SIR472ADP-T1-GE3 is a N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 18A (Tc).

Maximum Rds On at Id, Vgs: 9 mOhm @ 15A, 10V
Maximum Gate-Source Voltage: ±20V
Gate-Source Threshold Voltage: 2.3V @ 250μA
Maximum Gate Charge: 28nC @ 10V
Maximum Input Capacitance: 1040pF @ 15V
Power Dissipation: 3.3W (Ta), 14.7W (Tc)
Operating Temperature: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
160+	$0.3714	$59.4240
380+	$0.3048	$115.8240
590+	$0.2954	$174.2860
810+	$0.2857	$231.4170
1,050+	$0.2763	$290.1150
1,400+	$0.2476	$346.6400

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 27,000 pieces

MOQ: 160 pcs

Order Increment : 1 pcs

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