This MOSFET (Metal Oxide) transistor is designed for use in discrete semiconductor products such as FETs and MOSFETs.

• Series: TrenchFET® Gen IV
• Drain to Source Voltage: 40V
• Continuous Drain Current: 100A (Tc) @ 25°C
• Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
• Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 20 V
• Package / Case: PowerPAK® SO-8
• Supplier Device Package: PowerPAK® SO-8
• Mounting: SMD (SMT)
• Temperature Range: -55°C ~ 150°C (TJ)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V