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PSMN1R7-25YLDX

Part No PSMN1R7-25YLDX
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 100A LFPAK56 / N-Channel 25 V 100A (Tc) 135W (Tc) Surface Mount LFPAK56, Power-SO8
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Nexperia USA Inc.
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 46.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3415 pF @ 12 V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 135W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LFPAK56, Power-SO8
Package / Case SC-100, SOT-669
Base Product Number PSMN1R7
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1356470-PSMN1R7-25YLDX
Ultra Librarian 3D Model Ultra Librarian PSMN1R7-25YLDX CAD Model

Description

The 1356470-PSMN1R7-25YLDX is a high-performance N-channel MOSFET transistor from Nexperia USA Inc..

  • Operating Temperature: -55°C to 175°C
  • Drain-to-Source Voltage (Vdss): 25V
  • Continuous Drain Current (Id): 100A @ 25°C
  • On-Resistance (Rds On): 1.7mOhm @ 25A and 10V
  • Gate Charge (Qg): 46.7nC @ 10V
  • Package Type: SC-100, SOT-669
  • Mounting Type: Surface Mount
  • Power Dissipation: 135W

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4553 $50.9355
85+ $1.1941 $101.4985
130+ $1.1568 $150.3840
180+ $1.1195 $201.5100
235+ $1.0821 $254.2935
310+ $0.9702 $300.7620
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 1,500 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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