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Same model may have multiple batches, images only for reference.
SIR640DP-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIR640DP-T1-GE3

Part No SIR640DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 60A PPAK SO-8
Datasheet
SIR640DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 250μA
Max Gate Charge 113nC @ 10V
Max Input Capacitance 4930pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Maximum Rds On at Id,Vgs 1.7 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 115455-SIR640DP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIR640DP-T1-GE3 CAD Model

Description

The SIR640DP-T1-GE3 is an electronic component manufactured by Vishay.

  • Power Dissipation: 6.25W (Ta), 104W (Tc)
  • Continuous Drain Current @ 25°C: 60A (Tc)

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40+ $2.9278 $117.1120
62+ $2.8364 $175.8568
85+ $2.7449 $233.3165
109+ $2.6534 $289.2206
146+ $2.3788 $347.3048
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Availability: 1,500 pieces
MOQ: 17 pcs
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