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Same model may have multiple batches, images only for reference.
SIR644DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIR644DP-T1-GE3

Part No SIR644DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 60A PPAK SO-8
Datasheet
SIR644DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 71nC @ 10V
Max Input Capacitance 3200pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5.2W (Ta), 69W (Tc)
Maximum Rds On at Id,Vgs 2.7 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096475-SIR644DP-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIR644DP-T1-GE3 CAD Model

Description

The electronic component with id 434407 is a Vishay product with the Win Source part number 1096475-SIR644DP-T1-GE3.

  • Technology: MOSFET
  • Polarity: N-Channel
  • Supply and Demand: Sufficient
  • Temperature Range - Operating: -55°C to 150°C (TJ)
  • Case / Package: PowerPAK SO-8
  • Dimension: PowerPAK SO-8
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current at 25°C: 60A (Tc)
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Max Gate Charge: 71nC @ 10V
  • Max Input Capacitance: 3200pF @ 20V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 2.7 mOhm @ 20A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5174 $60.6960
95+ $1.2451 $118.2845
145+ $1.2062 $174.8990
200+ $1.1672 $233.4400
260+ $1.1284 $293.3840
345+ $1.0115 $348.9675
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Availability: 30,100 pieces
MOQ: 40 pcs
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