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SIR878ADP-T1-GE3

Part No SIR878ADP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 40A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.8V @ 250μA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 1275pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5W (Ta), 44.5W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 139217-SIR878ADP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIR878ADP-T1-GE3 CAD Model

Description

The SIR878ADP-T1-GE3 is a MOSFET polarity N-channel integrated circuit that is widely used in electronic circuits.

  • Power Dissipation: 5W (Ta) and 44.5W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V and 10V
  • Maximum Drain-Source Breakdown Voltage: 100V
  • Maximum Gate-Source Voltage: ±20V
  • Continuous Drain Current @ 25°C: 40A (Tc)
  • Maximum Rds On at Id, Vgs: 14 mOhm @ 15A, 10V
  • Operating Temperature Range: from -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5266 $61.0640
95+ $1.2526 $118.9970
145+ $1.2134 $175.9430
200+ $1.1743 $234.8600
255+ $1.1353 $289.5015
345+ $1.0178 $351.1410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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