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Same model may have multiple batches, images only for reference.
SIRA20DP-T1-RE3 Real Image
Same model may have multiple batches, images only for reference.

SIRA20DP-T1-RE3

Part No SIRA20DP-T1-RE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CHAN 25V POWERPAK SO-8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) at 25°C 81.7A , 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 0.58mOhm at 20A, 10V
Vgs(th) (Maximum) at Id 2.1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 200nC at 10V
Maximum Vgs +16V, -12V
Input Capacitance (Ciss) (Maximum) at Vds 10850pF at 10V
Power Dissipation (Maximum) 6.25W , 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PowerPAK SO-8
Manufacturer Package PowerPAK SO-8
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 805385-SIRA20DP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIRA20DP-T1-RE3 CAD Model

Description

The Vishay Siliconix SIRA20DP-T1-RE3 is a MOSFET (Metal Oxide) that belongs to the N-Channel FET type. It is a discrete semiconductor product that is designed to be used in various applications.

  • Transistor Type: MOSFET (N-Channel)
  • Manufacturer Package: PowerPAK SO-8
  • Drive Voltage: 4.5V, 10V
  • Drain to Source Voltage: 25V
  • Power Dissipation: 6.25W, 104W (Tc)
  • Gate Charge (Qg) (Maximum) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 10850pF @ 10V

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Quantity Unit Price Ext. Price
50+ $1.0485 $52.4250
120+ $0.8603 $103.2360
180+ $0.8334 $150.0120
250+ $0.8065 $201.6250
325+ $0.7796 $253.3700
430+ $0.6990 $300.5700
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