SIRA20DP-T1-RE3

Part No SIRA20DP-T1-RE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CHAN 25V POWERPAK SO-8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) at 25°C 81.7A , 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 0.58mOhm at 20A, 10V
Vgs(th) (Maximum) at Id 2.1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 200nC at 10V
Maximum Vgs +16V, -12V
Input Capacitance (Ciss) (Maximum) at Vds 10850pF at 10V
Power Dissipation (Maximum) 6.25W , 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PowerPAK SO-8
Manufacturer Package PowerPAK SO-8
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 805385-SIRA20DP-T1-RE3

Description

The Vishay Siliconix SIRA20DP-T1-RE3 is a MOSFET (Metal Oxide) that belongs to the N-Channel FET type. It is a discrete semiconductor product that is designed to be used in various applications. The supply and demand status is balanced. The transistor has a manufacturer package of PowerPAK SO-8 and a drive voltage of 4.5V, 10V. It has a drain to source voltage of 25V and a power dissipation of 6.25W, 104W (Tc). The transistor has a gate charge (Qg) (Maximum) at Vgs of 200nC at 10V and an input capacitance (Ciss) (Maximum) at Vds of 10850pF at 10V.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
65+ $0.8217 $53.4105
135+ $0.7687 $103.7745
205+ $0.7422 $152.1510
295+ $0.6892 $203.3140
380+ $0.6627 $251.8260
475+ $0.6362 $302.1950
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 12,380 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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