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SIRA88BDP-T1-GE3

Part No SIRA88BDP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.83mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 15 V
Power Dissipation (Max) 3.8W (Ta), 17W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIRA88
Other Names SIRA88BDP-T1-GE3TR,SIRA88BDP-T1-GE3DKR,SIRA88BDP-T1-GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277656-SIRA88BDP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIRA88BDP-T1-GE3 CAD Model

Description

The Vishay 1277656-SIRA88BDP-T1-GE3 is a popular electronic component product that is balanced in supply and demand.

  • Continuous Drain Current (Id) @ 25°C: 19A (Ta), 40A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.4890 $51.3450
250+ $0.4012 $100.3000
390+ $0.3887 $151.5930
535+ $0.3762 $201.2670
690+ $0.3636 $250.8840
925+ $0.3260 $301.5500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,208 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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