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SIS106DN-T1-GE3

Part No SIS106DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 9.8A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 18.5mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 30 V
Power Dissipation (Max) 3.2W (Ta), 24W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Product Number SIS106
Other Names SIS106DN-T1-GE3CT,SIS106DN-T1-GE3TR,SIS106DN-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277659-SIS106DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIS106DN-T1-GE3 CAD Model

Description

This electronic component is a MOSFET transistor with N-Channel FET type.

  • FET Type: N-Channel FET
  • Series: TrenchFET Gen IV
  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 9.8A (Ta) and 16A (Tc)
  • Package/Case: PowerPAK 1212-8
  • Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
  • Operating Temperature: -55°C ~ 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9061 $54.3660
135+ $0.7435 $100.3725
210+ $0.7203 $151.2630
290+ $0.6970 $202.1300
375+ $0.6738 $252.6750
500+ $0.6041 $302.0500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,560 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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