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SIS407DN-T1-GE3

Part No SIS407DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 25A 1212-8 PPAK / Trans MOSFET P-CH 20V 25A 8-Pin PowerPAK 1212 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 93.8nC @ 8V
Max Input Capacitance 2760pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 3.6W (Ta), 33W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 15.3A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 028772-SIS407DN-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Family Name SiS407DN
Introduction Date March 23, 2010
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SIS407DN-T1-GE3 CAD Model

Description

The Vishay SiS407DN-T1-GE3 is a P-channel polarity MOSFET transistor used in discrete semiconductor products.

  • Power Dissipation (Max): 3.6W (Ta), 33W (Tc)
  • Case/Package: PowerPAK 1212-8
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current at 25°C: 25A (Tc)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Max Gate Charge: 93.8nC @ 8V
  • Popularity: high
  • Applications: industrial and power management applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4245 $50.9400
255+ $0.3977 $101.4135
395+ $0.3842 $151.7590
560+ $0.3574 $200.1440
730+ $0.3439 $251.0470
910+ $0.3305 $300.7550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 82,620 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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