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SIS415DNT-T1-GE3

Part No SIS415DNT-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 35A PPAK1212-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Series TrenchFET®
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 5460 pF @ 10 V
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Product Number SIS415
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 849552-SIS415DNT-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIS415DNT-T1-GE3 CAD Model

Description

The SIS415DNT-T1-GE3 is a P-channel MOSFET transistor from Vishay's TrenchFET series.

  • Mounting Type: Surface mount
  • Package: PowerPAK 1212-8
  • Drain to Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 35A @ 25°C
  • Maximum On-Resistance (Rds On): 4mOhm @ 20A and 10V gate-source voltage (Vgs)
  • Gate Charge (Qg): 180nC @ 10V
  • Input Capacitance (Ciss): 5460pF @ 10V drain-source voltage (Vds)
  • Maximum Power Dissipation: 3.7W @ ambient temperature and 52W @ case temperature
  • Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4440 $59.9400
320+ $0.3644 $116.6080
495+ $0.3530 $174.7350
680+ $0.3416 $232.2880
875+ $0.3303 $289.0125
1,175+ $0.2961 $347.9175
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,061 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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