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SISH114ADN-T1-GE3

Part No SISH114ADN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1230 pF @ 15 V
Power Dissipation (Max) 3.7W (Ta), 39W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8SH
Package / Case PowerPAK® 1212-8SH
Base Product Number SISH114
Other Names SISH114ADN-T1-GE3TR,SISH114ADN-T1-GE3CT,SISH114ADN-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277599-SISH114ADN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISH114ADN-T1-GE3 CAD Model

Description

The Vishay Siliconix MOSFET is a type of transistor that is used in electronic circuits.

  • Type: TrenchFET™
  • Win Source Part Number: 1277599-SISH114ADN-T1-GE3
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 35A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
  • Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
  • Win Source Part Number: 1277599-SISH114ADN-T1-GE3

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7564 $52.9480
165+ $0.6206 $102.3990
250+ $0.6012 $150.3000
345+ $0.5818 $200.7210
445+ $0.5625 $250.3125
595+ $0.5043 $300.0585
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,082 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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