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SISH407DN-T1-GE3

Part No SISH407DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 15.4A/25A PPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Series TrenchFET®
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 15.4A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 15.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 93.8 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 2760 pF @ 10 V
Power Dissipation (Max) 3.6W (Ta), 33W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8SH
Package / Case PowerPAK® 1212-8SH
Base Product Number SISH407
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 849556-SISH407DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISH407DN-T1-GE3 CAD Model

Description

The SISH407DN-T1-GE3 is a P-channel MOSFET from Vishay's TrenchFET series.

  • Type: Surface mount transistor
  • Drain to Source Voltage: 20V
  • Continuous Drain Current: 15.4A (Ta), 25A (Tc)
  • Maximum On-Resistance: 9.5mOhm @ 15.3A and 4.5V gate-source voltage
  • Gate Threshold Voltage: 1V @ 250µA
  • Power Dissipation: 3.6W (Ta), 33W (Tc)
  • Package: PowerPAK 1212-8SH
  • Packaging: Tape & reel
  • Standard Package: 3,000 pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4769 $59.6125
300+ $0.3913 $117.3900
460+ $0.3792 $174.4320
630+ $0.3670 $231.2100
815+ $0.3547 $289.0805
1,090+ $0.3180 $346.6200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,010 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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