The Vishay SISH434DN-T1-GE3 MOSFET is a N-Channel FET with a drain to source voltage of 40V and a maximum continuous drain current of 17.6A (Ta), 35A (Tc). The Rds On (Max) @ Id, Vgs is 7.6mOhm @ 16.2A, 10V and the Vgs(th) (Max) @ Id is 2.2V @ 250μA. The MOSFET has a Power Dissipation (Max) of 3.8W (Ta), 52W (Tc) and a Gate Charge (Qg) (Max) @ Vgs of 40 nC @ 10 V. The SMD (SMT) MOSFET is packaged in a PowerPAK® 1212-8SH package and is suitable for use in Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single category.