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SISH617DN-T1-GE3

Part No SISH617DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 13.9A/35A PPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Series TrenchFET®
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 13.9A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12.3mOhm @ 13.9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 15 V
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8SH
Package / Case PowerPAK® 1212-8SH
Base Product Number SISH617
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 849808-SISH617DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISH617DN-T1-GE3 CAD Model

Description

The 849808-SISH617DN-T1-GE3 from Vishay is a P-channel MOSFET transistor from the TrenchFET® series.

  • Vdss: 30V
  • Id: 13.9A (Ta), 35A (Tc)
  • Rds On: 12.3mOhm @ 13.9A and 10V Vgs
  • Mounting Type: Surface Mount
  • Package: PowerPAK® 1212-8SH
  • Power Dissipation: 3.7W (Ta), 52W (Tc)
  • Temperature Range: -55°C to 150°C
  • Product Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5810 $52.2900
210+ $0.4767 $100.1070
325+ $0.4618 $150.0850
450+ $0.4469 $201.1050
580+ $0.4320 $250.5600
775+ $0.3874 $300.2350
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,460 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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