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Same model may have multiple batches, images only for reference.

SISS12DN-T1-GE3

Name: SISS12DN-T1-GE3
Brand: Vishay
SKU: 1277668
Availability: InStock
Rating: 4.93 (5 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	SISS12DN-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Datasheet	SISS12DN-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Package	Tape & Reel
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	37.5A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.98mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	89 nC @ 10 V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	4270 pF @ 20 V
Power Dissipation (Max)	5W (Ta), 65.7W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	PowerPAK® 1212-8S
Package / Case	PowerPAK® 1212-8S
Base Product Number	SISS12
Other Names	SISS12DN-T1-GE3TR,SISS12DN-T1-GE3CT,SISS12DN-T1-GE3DKR
Standard Package	3,000
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1277668-SISS12DN-T1-GE3
Ultra Librarian 3D Model	Ultra Librarian SISS12DN-T1-GE3 CAD Model

Alternative Products

Description

The SISS12DN-T1-GE3 MOSFET transistor is a member of the TrenchFET® Gen IV series manufactured by Vishay Siliconix.

Type: N-channel FET
Drain to Source Voltage (Vdss): 40V
Continuous Drain Current (Id): 37.5A (Ta), 60A (Tc)
On-Resistance (Rds On): 1.98mOhm @ 10A and 10V gate-source voltage (Vgs)
Gate-Source Threshold Voltage (Vgs(th)): 2.4V @ 250μA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Mounting: SMD (SMT)
Operating Temperature: -55°C to 150°C (TJ)

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