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SISS27DN-T1-GE3

Part No SISS27DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 50A PPAK 1212-8S
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Series TrenchFET®
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5250 pF @ 15 V
Power Dissipation (Max) 4.8W (Ta), 57W (Tc)
Temperature Range - Operating -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
Base Product Number SISS27
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 667348-SISS27DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISS27DN-T1-GE3 CAD Model

Description

The 667348-SISS27DN-T1-GE3 is a P-channel MOSFET transistor from Vishay.

  • Manufacturer: Vishay
  • Type: P-Channel MOSFET
  • Series: TrenchFET
  • Drain to Source Voltage: 30 V
  • Continuous Drain Current: 50 amps @ 25 degrees Celsius
  • On-Resistance: 5.6 milliohms @ 15 amps and 10 volts
  • Gate Threshold Voltage: 2.2 volts @ 250 microamps
  • Mounting: Surface Mount
  • Package: PowerPAK 1212-8S
  • Power Dissipation (Ambient): 4.8 watts
  • Power Dissipation (Case): 57 watts
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4179 $50.1480
260+ $0.3914 $101.7640
400+ $0.3782 $151.2800
570+ $0.3518 $200.5260
740+ $0.3385 $250.4900
925+ $0.3253 $300.9025
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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