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SISS28DN-T1-GE3

Part No SISS28DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.52mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 4.5 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 3640 pF @ 10 V
Power Dissipation (Max) 57W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
Base Product Number SISS28
Other Names SISS28DN-T1-GE3TR,SISS28DN-T1-GE3CT,SISS28DN-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277669-SISS28DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISS28DN-T1-GE3 CAD Model

Description

The Vishay SISS28DN-T1-GE3 is a TrenchFET® Gen IV MOSFET designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 1.52mOhm @ 15A, 10V
  • Power Dissipation (Max): 57W (Tc)
  • Mounting: surface mountable
  • Package: PowerPAK® 1212-8S
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 10 V
  • Application: FETs, MOSFETs - Single applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6435 $57.9150
220+ $0.5281 $116.1820
340+ $0.5116 $173.9440
470+ $0.4950 $232.6500
605+ $0.4786 $289.5530
810+ $0.4290 $347.4900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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