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SISS30LDN-T1-GE3

Part No SISS30LDN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 55.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2070 pF @ 40 V
Power Dissipation (Max) 4.8W (Ta), 57W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
Base Product Number SISS30
Other Names SISS30LDN-T1-GE3CT,SISS30LDN-T1-GE3TR,SISS30LDN-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277670-SISS30LDN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISS30LDN-T1-GE3 CAD Model

Description

The SISS30LDN-T1-GE3 by Vishay is a N-Channel MOSFET that is perfect for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Power Dissipation (max): 4.8W (Ta), 57W (Tc)
  • Package/Case: PowerPAK® 1212-8S

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.8006 $50.4108
44+ $2.2979 $101.1076
68+ $2.2261 $151.3748
93+ $2.1543 $200.3499
121+ $2.0825 $251.9825
161+ $1.8671 $300.6031
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,060 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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