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SISS65DN-T1-GE3

Part No SISS65DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen III
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 25.9A (Ta), 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 138 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4930 pF @ 15 V
Power Dissipation (Max) 5.1W (Ta), 65.8W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
Base Product Number SISS65
Other Names SISS65DN-T1-GE3DKR,SISS65DN-T1-GE3CT,SISS65DN-T1-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277677-SISS65DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISS65DN-T1-GE3 CAD Model

Description

The SISS65DN-T1-GE3 from Vishay Siliconix is a P-Channel MOSFET (Metal Oxide) transistor from the TrenchFET® Gen III series.

  • Drain to Source Voltage (Vdss): 30 V
  • Continuous Drain Current (Id) @ 25°C: 25.9A (Ta), 94A (Tc)
  • Maximum On Resistance: 4.6mOhm @ 15A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 15 V
  • Maximum Vgs: ±20V
  • Operating Temperature: -55°C ~ 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9605 $52.8275
130+ $0.7881 $102.4530
200+ $0.7635 $152.7000
275+ $0.7389 $203.1975
355+ $0.7142 $253.5410
470+ $0.6403 $300.9410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,835 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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