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SISS70DN-T1-GE3

Part No SISS70DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 125 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Ta), 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 29.8mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 535 pF @ 62.5 V
Power Dissipation (Max) 5.1W (Ta), 65.8W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
Base Product Number SISS70
Other Names SISS70DN-T1-GE3CT,SISS70DN-T1-GE3TR,SISS70DN-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277602-SISS70DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISS70DN-T1-GE3 CAD Model

Description

The SISS70DN-T1-GE3 is an N-channel MOSFET transistor from the TrenchFET series by Vishay Siliconix.

  • Drain to Source Voltage: 125 V
  • Maximum Continuous Drain Current: 8.5A @ 25°C and 31A @ Tc
  • Maximum Rds On: 29.8mOhm @ 8.5A and 10V
  • Package: PowerPAK 1212-8S
  • Gate Charge (Qg): 15.3 nC @ 10 V
  • Input Capacitance (Ciss): 535 pF @ 62.5 V
  • Temperature Range: -55°C to 150°C
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.8209 $52.3881
21+ $4.7762 $100.3002
33+ $4.6269 $152.6877
45+ $4.4777 $201.4965
58+ $4.3284 $251.0472
78+ $3.8806 $302.6868
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,280 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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