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Same model may have multiple batches, images only for reference.
SISS72DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SISS72DN-T1-GE3

Part No SISS72DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SISS72DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 7A (Ta), 25.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 42mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 75 V
Power Dissipation (Max) 5.1W (Ta), 65.8W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
Base Product Number SISS72
Other Names SISS72DN-T1-GE3CT,SISS72DN-T1-GE3DKR,SISS72DN-T1-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277603-SISS72DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISS72DN-T1-GE3 CAD Model

Description

The SISS72DN-T1-GE3 is a N-Channel MOSFET transistor from Vishay Siliconix.

  • Series: TrenchFET™
  • Drain to Source Voltage: 150V
  • Continuous Drain Current: 7A @ 25°C (Ta) and 25.5A @ 150°C (Tc)
  • Maximum On-Resistance: 42mOhm @ 7A and 10V gate-source voltage
  • Gate-Source Voltage Threshold: 4V @ 250μA
  • Maximum Power Dissipation: 5.1W @ 25°C (Ta) and 65.8W @ 150°C (Tc)
  • Package: PowerPAK® 1212-8S
  • Gate Charge: 22nC @ 10V
  • Input Capacitance: 550pF @ 75V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Ideal for: power management applications

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