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Same model may have multiple batches, images only for reference.
SISS98DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SISS98DN-T1-GE3

Part No SISS98DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 14.1A PPAK  /  N-Channel 200 V 14.1A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8
Datasheet
SISS98DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series ThunderFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 14.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 105mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 7.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 608 pF @ 100 V
Power Dissipation (Max) 57W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Product Number SISS98
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SISS98DN-T1-GE3DKR,SISS98DN-T1-GE3CT,SISS98DN-T1-GE3TR
Standard Package 3,000
Win Source Part Number 970253-SISS98DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISS98DN-T1-GE3 CAD Model

Description

This Vishay Siliconix electronic component is part of the ThunderFET™ series and is a MOSFET (Metal Oxide) with a drain to source voltage (Vdss) of 200 V.

  • Continuous Drain Current: 14.1A (Tc)
  • Rds On (Max): 105mOhm @ 7A, 10V
  • Power Dissipation (Max): 57W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: PowerPAK® 1212-8
  • Suitable for: Discrete semiconductor applications

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Quantity Unit Price Ext. Price
35+ $1.4338 $50.1830
85+ $1.1765 $100.0025
135+ $1.1397 $153.8595
185+ $1.1030 $204.0550
235+ $1.0662 $250.5570
315+ $0.9559 $301.1085
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