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Same model may have multiple batches, images only for reference.
SUD40N10-25-T4-E3 Real Image
Same model may have multiple batches, images only for reference.

SUD40N10-25-T4-E3

Part No SUD40N10-25-T4-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 40A TO252
Datasheet
SUD40N10-25-T4-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 2400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 136W (Tc)
Maximum Rds On at Id,Vgs 25 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 031610-SUD40N10-25-T4-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SUD40N10-25-T4-E3 CAD Model

Description

The Vishay MOSFET is a high-performance N-Channel power transistor that is designed for use in discrete semiconductor products.

  • Manufacturer: Vishay
  • Power Dissipation: 3W (Ta) and 136W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 40A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 60nC @ 10V
  • Package: TO-252, (D-Pak)
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63

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