The SIZ328DT-T1-GE3 is a 2 N-Channel Dual FET from Vishay Siliconix. It belongs to the TrenchFET Gen IV series and is designed for use in discrete semiconductor products like Transistors, FETs, MOSFETs - Arrays.

• FET Type: Standard
• Package: Tape & Reel
• Drain to Source Voltage (Vdss): 25V
• Continuous Drain Current (Id): 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
• Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V
• Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V
• Power Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
• Temperature Range: -55°C to 150°C (TJ)
• Package: 8-PowerWDFN
• Mounting: SMD (SMT)