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SIZ346DT-T1-GE3

Part No SIZ346DT-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series PowerPAIR®, TrenchFET®
Package Tape & Reel
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 17A (Tc), 30A (Tc)
Rds On (Max) @ Id, Vgs 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA, 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5nC @ 4.5V, 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 325pF @ 15V, 650pF @ 15V
Power - Max 16W, 16.7W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-PowerWDFN
Supplier Device Package 8-Power33 (3x3)
Base Product Number SIZ346
Other Names SIZ346DT-T1-GE3,SIZ346DT-T1-GE3TR,SIZ346DT-T1-GE3CT,SIZ346DT-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278512-SIZ346DT-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIZ346DT-T1-GE3 CAD Model

Description

The SIZ346DT-T1-GE3 is a dual N-channel MOSFET transistor array manufactured by Vishay Siliconix.

  • Maximum Drain to Source Voltage: 30V
  • Continuous Drain Current: 17A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
  • Family: PowerPAIR, TrenchFET
  • Category: Discrete semiconductor products
  • Temperature Range: -55°C to 150°C (TJ)
  • MSL Level: 1 (Unlimited)

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.4248 $59.4720
335+ $0.3486 $116.7810
515+ $0.3377 $173.9155
710+ $0.3269 $232.0990
915+ $0.3159 $289.0485
1,225+ $0.2832 $346.9200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,740 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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