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Same model may have multiple batches, images only for reference.
SIZ702DT-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIZ702DT-T1-GE3

Part No SIZ702DT-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel 30-V (D-S) MOSFETs
Datasheet
SIZ702DT-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Series TrenchFET
Packaging Reel - TR
FET Type 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 16A
Rds On (Maximum) @ Id, Vgs 12 mOhm @ 13.8A, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 21nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 790pF @ 15V
Power - Max 27W, 30W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package 6-PowerPair
Manufacturer Package 6-PowerPair
Win Source Part Number 1250039-SIZ702DT-T1-GE3
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Limited
Family Name SiZ702DT
Introduction Date November 01, 2009
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian SIZ702DT-T1-GE3 CAD Model

Description

The SIZ702DT-T1-GE3 is a discrete semiconductor electronic component manufactured by Vishay.

  • Series: TrenchFET
  • Packaging: Reel - TR
  • FET Type: 2 N-Channel (Half Bridge)
  • Gate Type: Logic Level
  • Continuous Drain Current (Id): 16A
  • Maximum Power: 27W, 30W
  • Mounting Type: SMD
  • Drain-Source Breakdown Voltage: 30V

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