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Same model may have multiple batches, images only for reference.
SIZ710DT-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIZ710DT-T1-GE3

Part No SIZ710DT-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 16A POWERPAIR
Datasheet
SIZ710DT-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 16A, 35A
Maximum Rds On at Id,Vgs 6.8 mOhm @ 19A, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 820pF @ 10V
Maximum Power Dissipation 27W, 48W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-PowerPair
Win Source Part Number 1096548-SIZ710DT-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name SiZ710DT
Introduction Date October 04, 2010
ECCN EAR99
Country of Origin China
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian SIZ710DT-T1-GE3 CAD Model

Description

The SiZ710DT is a 2 N-Channel (Half Bridge) FET type with a logic level gate.

  • Package: 6-PowerPair
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Maximum Power Dissipation: 27W, 48W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 16A, 35A @ 25°C
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate Charge: 18nC @ 10V
  • Max Input Capacitance: 820pF @ 10V
  • Maximum Rds On: 6.8 mOhm @ 19A, 10V
  • Estimated EOL Date: 2024

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4553 $50.9355
85+ $1.1941 $101.4985
130+ $1.1568 $150.3840
180+ $1.1195 $201.5100
235+ $1.0821 $254.2935
310+ $0.9702 $300.7620
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Availability: 52,550 pieces
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