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Same model may have multiple batches, images only for reference.
SIZ900DT-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIZ900DT-T1-GE3

Part No SIZ900DT-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 24A POWERPAIR
Datasheet
SIZ900DT-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 24A, 28A
Maximum Rds On at Id,Vgs 7.2 mOhm @ 19.4A, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 1830pF @ 15V
Maximum Power Dissipation 48W, 100W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-PowerPair
Win Source Part Number 064671-SIZ900DT-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIZ900DT-T1-GE3 CAD Model

Description

The Vishay SIZ900DT-T1-GE3 is a high-quality FET that is designed to operate at an operating temperature range of -55°C to 150°C.

  • Operating Temperature Range: -55°C to 150°C
  • Maximum Power Dissipation: 48W and 100W
  • Packaging: Reel
  • Mounting: SMT
  • Manufacturer: Vishay

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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