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Same model may have multiple batches, images only for reference.
SIZ902DT-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIZ902DT-T1-GE3

Part No SIZ902DT-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 16A POWERPAIR
Datasheet
SIZ902DT-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 16A
Maximum Rds On at Id,Vgs 12 mOhm @ 13.8A, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 21nC @ 10V
Max Input Capacitance 790pF @ 15V
Maximum Power Dissipation 29W, 66W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PowerPair
Win Source Part Number 104773-SIZ902DT-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIZ902DT-T1-GE3 CAD Model

Description

The Vishay 104773-SIZ902DT-T1-GE3 is a 2 N-Channel (Half Bridge) MOSFET with a maximum power dissipation of 29W, 66W and a drain-source breakdown voltage of 30V.

  • Maximum Power Dissipation: 29W, 66W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 16A
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Rds On @ Id,Vgs: 12 mOhm @ 13.8A, 10V
  • Package: 8-PowerPair
  • Maximum Gate Charge: 21nC @ 10V
  • Maximum Input Capacitance: 790pF @ 15V
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9895 $59.3700
145+ $0.8120 $117.7400
225+ $0.7866 $176.9850
305+ $0.7611 $232.1355
395+ $0.7359 $290.6805
530+ $0.6597 $349.6410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,400 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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