The Vishay Siliconix SIZF916DT-T1-GE3 is a dual N-Channel MOSFET array that is part of the TrenchFET® Gen IV series.

• Drain to Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 23A (Ta), 40A (Tc) @ 25°C
• Maximum Rds On: 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V
• Power Rating: 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
• Package: Tape and reel
• Standard Package: 3,000 pieces
• Dimensions: 8-PowerWDFN
• Gate Charge (Qg): 22nC @ 10V, 95nC @ 10V
• Input Capacitance (Ciss): 1060pF @ 15V, 4320pF @ 15V
• Operating Temperature Range: from -55°C to 150°C