The SIZF920DT-T1-GE3 is a TrenchFET® Gen IV dual N-channel MOSFET that is part of the discrete semiconductor products>transistors - FETs, MOSFETs - arrays category.

• Drain to Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)
• Maximum Rds On @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V
• Maximum Vgs(th) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
• Maximum Power Rating: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V
• Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V
• Mounting: Surface mount
• Package/Case: 8-PowerWDFN
• Packaging: Tape and reel
• Standard Package: 3,000
• ECCN: EAR99