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Same model may have multiple batches, images only for reference.
SQ1470EH-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SQ1470EH-T1-GE3

Part No SQ1470EH-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 2.8A SC70
Datasheet
SQ1470EH-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.6V @ 250μA
Max Gate Charge 6.6nC @ 4.5V
Max Input Capacitance 610pF @ 25V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 3.3W (Tc)
Maximum Rds On at Id,Vgs 65 mOhm @ 3.8A, 4.5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 1101690-SQ1470EH-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SQ1470EH-T1-GE3 CAD Model

Description

The Vishay MOSFET is a high-performance N-Channel device with a maximum power dissipation of 3.3W (Tc).

  • Polarity: N-Channel
  • Maximum Power Dissipation: 3.3W (Tc)
  • Category: Discrete Semiconductor Products
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 2.8A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 1.6V @ 250μA
  • Maximum Gate Charge: 6.6nC @ 4.5V
  • Maximum Input Capacitance: 610pF @ 25V
  • Maximum Rds On @ Id,Vgs: 65 mOhm @ 3.8A, 4.5V
  • Case: SC-70-6 (SOT-363)
  • Mounting Technology: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
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145+ $0.8000 $116.0000
225+ $0.7749 $174.3525
310+ $0.7500 $232.5000
400+ $0.7249 $289.9600
535+ $0.6500 $347.7500
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Availability: 6,300 pieces
MOQ: 60 pcs
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