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SQ1912EH-T1_GE3

Part No SQ1912EH-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 800mA (Tc)
Rds On (Max) @ Id, Vgs 280mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 75pF @ 10V
Power - Max 1.5W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-70-6
Base Product Number SQ1912
Other Names SQ1912EH-T1_GE3DKR,SQ1912EH-T1_GE3CT,SQ1912EH-T1_GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278520-SQ1912EH-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQ1912EH-T1_GE3 CAD Model

Description

The Vishay Siliconix 1278520-SQ1912EH-T1_GE3 is a dual N-channel MOSFET designed for use in automotive applications.

  • Drain to Source Voltage: 20V
  • Continuous Drain Current: 800mA @ 25°C
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
  • Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
  • Series: Automotive, AEC-Q101, TrenchFET® series
  • Packaging: Tape and reel package of 3,000

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Pricing & Ordering

Quantity Unit Price Ext. Price
315+ $0.1839 $57.9285
770+ $0.1510 $116.2700
1,185+ $0.1462 $173.2470
1,635+ $0.1415 $231.3525
2,115+ $0.1368 $289.3320
2,825+ $0.1227 $346.6275
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 315 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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