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SQ2351ES-T1_GE3

Part No SQ2351ES-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CHAN 20V SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 5.5nC @ 4.5V
Max Input Capacitance 330pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2W (Tc)
Maximum Rds On at Id,Vgs 115 mOhm @ 2.4A, 4.5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1101698-SQ2351ES-T1_GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SQ2351ES-T1_GE3 CAD Model

Description

The Vishay 1101698-SQ2351ES-T1_GE3 is a MOSFET technology P-Channel polarity discrete semiconductor product.

  • Polarity: P-Channel
  • Maximum Power Dissipation: 2W (Tc)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Package: Reel
  • Mounting Type: SMD (SMT)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Dimension: TO-236-3, SC-59, SOT-23-3
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 3.2A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 5.5nC @ 4.5V
  • Maximum Input Capacitance: 330pF @ 10V
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On @ Id,Vgs: 115 mOhm @ 2.4A, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.2830 $50.9400
380+ $0.2651 $100.7380
590+ $0.2562 $151.1580
840+ $0.2383 $200.1720
1,095+ $0.2293 $251.0835
1,365+ $0.2203 $300.7095
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 91,500 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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