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Same model may have multiple batches, images only for reference.
SQ3419EV-T1_BE3 Vishay
Same model may have multiple batches, images only for reference.

SQ3419EV-T1_BE3

Part No SQ3419EV-T1_BE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 6.9A 6TSOP
Datasheet
SQ3419EV-T1_BE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 6.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 58mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.3 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 990 pF @ 20 V
FET Feature -
Power Dissipation (Max) 5W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
Base Product Number SQ3419
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1379979-SQ3419EV-T1_BE3
Ultra Librarian 3D Model Ultra Librarian SQ3419EV-T1_BE3 CAD Model

Description

The 1379979-SQ3419EV-T1_BE3 is a P-channel MOSFET from Vishay Siliconix's Automotive, AEC-Q101, TrenchFET® series. It comes in a SOT-23-6 Thin (TSOT-23-6) package and is designed for surface mount applications.

  • Drain-to-Source Voltage (Vdss): 40 V
  • Continuous Drain Current (Id): 6.9A @ 25°C
  • On-Resistance (Rds On): 58mOhm @ 2.5A and 10V
  • Gate-Source Threshold Voltage (Vgs(th)): 2.5V @ 250µA
  • Gate Charge (Qg): 11.3 nC @ 4.5V
  • Maximum Gate-Source Voltage (Vgs): ±20V
  • Input Capacitance (Ciss): 990 pF @ 20V
  • Power Dissipation: 5W
  • Operating Temperature Range: -55°C to 175°C

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