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SQ3426EEV-T1-GE3

Part No SQ3426EEV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 7A 6TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 12nC @ 4.5V
Max Input Capacitance 700pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5W (Tc)
Maximum Rds On at Id,Vgs 42 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1101703-SQ3426EEV-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SQ3426EEV-T1-GE3 CAD Model

Description

The Vishay SQ3426EEV-T1-GE3 is an N-channel MOSFET that is ideal for use in a range of applications, including power management, motor control, and battery charging.

  • Maximum Power Dissipation: 5W
  • Drain-Source Breakdown Voltage: 60V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 12nC @ 4.5V
  • Maximum Gate-Source Voltage: ±20V
  • Package: 6-TSOP

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Pricing & Ordering

Quantity Unit Price Ext. Price
435+ $0.1328 $57.7680
1,055+ $0.1097 $115.7335
1,635+ $0.1063 $173.8005
2,250+ $0.1028 $231.3000
2,910+ $0.0993 $288.9630
3,900+ $0.0889 $346.7100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,500 pieces
MOQ: 435 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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