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Same model may have multiple batches, images only for reference.
SQ3469EV-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQ3469EV-T1_GE3

Part No SQ3469EV-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 8A TSOP-6
Datasheet
SQ3469EV-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 25μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 1020pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5W (Tc)
Maximum Rds On at Id,Vgs 36 mOhm @ 6.7A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1101708-SQ3469EV-T1_GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SQ3469EV-T1_GE3 CAD Model

Description

The Vishay MOSFET is a P-Channel power transistor designed for use in discrete semiconductor products.

  • Channel Type: P-Channel
  • Maximum Power Dissipation: 5W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 8A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 25μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 36 mOhm @ 6.7A, 10V
  • Package: 6-TSOP (SOT-23-6 Thin and TSOT-23-6)
  • Drive Voltage: 4.5V (Max Rds On), 10V (Min Rds On)

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.4003 $58.0435
355+ $0.3285 $116.6175
545+ $0.3183 $173.4735
750+ $0.3081 $231.0750
970+ $0.2978 $288.8660
1,300+ $0.2670 $347.1000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 45,500 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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