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SQ3985EV-T1_GE3

Part No SQ3985EV-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
Rds On (Max) @ Id, Vgs 145mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 10V
Power - Max 3W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
Base Product Number SQ3985
Other Names SQ3985EV-T1_GE3,SQ3985EV-T1_GE3CT,SQ3985EV-T1_GE3DKR,SQ3985EV-T1_GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278526-SQ3985EV-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQ3985EV-T1_GE3 CAD Model

Description

The SQ3985EV-T1_GE3 is a 20V P-channel MOSFET transistor array from Vishay Siliconix. This automotive-grade transistor array is AEC-Q101 qualified and features TrenchFET technology.

  • Package: SOT-23-6 Thin or TSOT-23-6
  • Maximum Power Dissipation: 3W
  • Continuous Drain Current: 3.9A @ 25°C
  • Maximum On-Resistance: 145mOhm @ 2.8A and 4.5V gate-source voltage
  • Maximum Gate Charge: 4.6nC @ 4.5V gate-source voltage
  • Maximum Input Capacitance: 350pF @ 10V drain-source voltage
  • Maximum Threshold Voltage: 1.5V @ 250μA drain-source current
  • Operating Temperature Range: -55°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4588 $50.4680
270+ $0.3765 $101.6550
415+ $0.3647 $151.3505
570+ $0.3530 $201.2100
735+ $0.3412 $250.7820
985+ $0.3059 $301.3115
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,917 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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