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Same model may have multiple batches, images only for reference.
RW1C020UNT2R Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RW1C020UNT2R

Part No RW1C020UNT2R
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 2A WEMT6
Datasheet
RW1C020UNT2R Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 2nC @ 4.5V
Max Input Capacitance 180pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 400mW (Ta)
Maximum Rds On at Id,Vgs 105 mOhm @ 2A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-WEMT
Dimension SOT-563, SOT-666
Win Source Part Number 107497-RW1C020UNT2R
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RW1C020UNT2R CAD Model

Description

The RW1C020UNT2R is an N-channel MOSFET manufactured by Rohm Semiconductor.

  • Package: Reel - TR
  • Mounting Style: SMD (SMT)
  • Power Dissipation (Max): 400mW (Ta)
  • Continuous Drain Current @ 25°C: 2A (Ta)
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Maximum Gate Charge: 2nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 105 mOhm @ 2A, 4.5V
  • Supply and Demand Status: Balanced

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