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Same model may have multiple batches, images only for reference.
SQ4920EY-T1_BE3 Real Image
Same model may have multiple batches, images only for reference.

SQ4920EY-T1_BE3

Part No SQ4920EY-T1_BE3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET 2N-CH 30V 8A 8SO / Mosfet Array 30V 8A (Tc) 4.4W (Tc) Surface Mount 8-SOIC
Datasheet
SQ4920EY-T1_BE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Rds On (Max) @ Id, Vgs 14.5mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1465pF @ 15V
Power - Max 4.4W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number SQ4920
Standard Package 2,500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1349533-SQ4920EY-T1_BE3
Ultra Librarian 3D Model Ultra Librarian SQ4920EY-T1_BE3 CAD Model

Description

The Vishay SQ4920EY-T1_BE3 is a dual N-channel MOSFET with a drain-source voltage rating of 30 V and a maximum continuous drain current of 8 A @ a temperature of 25°C.

  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Applications: power supplies, motor drives, and other high-current applications
  • Maximum Rds On @ Id, Vgs: 14.5mOhm @ 6A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V

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