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SQ4946EY-T1-E3

Part No SQ4946EY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 4.5A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 55 mOhm @ 4.5A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 30nC @ 10V
Maximum Power Dissipation 2.4W
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1101714-SQ4946EY-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SQ4946EY-T1-E3 CAD Model

Description

The Vishay SQ4946EY-T1-E3 is a dual N-channel MOSFET that is designed for use in electronic devices.

  • Maximum Power Dissipation: 2.4W
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 4.5A
  • Gate: Logic Level Gate
  • Applications: Power supplies, motor control, and lighting control
  • Family: Discrete Semiconductor Products
  • Supply and Demand: Sufficient

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