The TrenchFET® series N-channel MOSFET from Vishay Siliconix is a discrete semiconductor product used in single transistor applications.

• Features: Automotive, AEC-Q101 features
• Package/Case: PowerPAK® SC-70-6
• Mounting: SMD (SMT)
• Technology: MOSFET (Metal Oxide)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
• Rds On (Max) @ Id, Vgs: 32mOhm @ 3A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Power Dissipation (Max): 13.6W (Tc)
• Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 636 pF @ 25 V
• Vgs (Max): ±20V
• Temperature Range: -55°C ~ 175°C (TJ)