The SQA470EEJ-T1_GE3 is an N-Channel MOSFET (Metal Oxide) transistor from Vishay Siliconix.

• Series: TrenchFET® series transistor
• Package: Automotive, AEC-Q101
• Drain to Source Voltage (Vdss): 30 V
• Continuous Drain Current: 2.25A (Tc) @ 25°C
• Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
• Vgs(th) (Max) @ Id: 1.6V @ 250μA
• Maximum Gate Charge: 5.2 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
• Maximum Power Dissipation: 13.6W (Tc)
• Package: PowerPAK® SC-70-6 package
• Operating Temperature Range: -55°C ~ 175°C (TJ)
• Ideal for: Use in Transistors - FETs, MOSFETs - Single applications