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SQA470EJ-T1_GE3

Part No SQA470EJ-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 2.25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 65mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 20 V
Power Dissipation (Max) 13.6W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SC-70-6 Single
Package / Case PowerPAK® SC-70-6
Base Product Number SQA470
Other Names SQA470EJ-T1_GE3CT,SQA470EJ-T1_GE3DKR,SQA470EJ-T1_GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1277830-SQA470EJ-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQA470EJ-T1_GE3 CAD Model

Description

The SQA470EJ-T1_GE3 is a N-Channel MOSFET (Metal Oxide) transistor from Vishay Siliconix.

  • Drain to Source Voltage (Vdss): 30 V
  • Continuous Drain Current (Id): 2.25A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250μA
  • Maximum Power Dissipation: 13.6W (Tc)
  • Package: PowerPAK® SC-70-6
  • Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 20 V
  • Suitable for: Use in automotive applications
  • Temperature Range: -55°C ~ 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1183 $61.5065
115+ $1.0462 $120.3130
175+ $1.0102 $176.7850
250+ $0.9380 $234.5000
325+ $0.9020 $293.1500
405+ $0.8658 $350.6490
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,250 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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