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Same model may have multiple batches, images only for reference.
SQD15N06-42L_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQD15N06-42L_GE3

Part No SQD15N06-42L_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 15A
Datasheet
SQD15N06-42L_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 535pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 37W (Tc)
Maximum Rds On at Id,Vgs 42 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1101720-SQD15N06-42L_GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SQD15N06-42L_GE3 CAD Model

Description

The Vishay SQD15N06-42L_GE3 is an N-channel MOSFET transistor that has a maximum drain-source breakdown voltage of 60V and a continuous drain current of 15A @ 25°C.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 15A @ 25°C
  • Maximum Rds On: 42 mOhm @ 10A and 10V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 535pF @ 25V
  • Package: TO-252 (D-Pak)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Risk: Counterfeit products in the open market

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7321 $51.2470
170+ $0.6007 $102.1190
260+ $0.5820 $151.3200
360+ $0.5632 $202.7520
460+ $0.5444 $250.4240
615+ $0.4881 $300.1815
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Availability: 40,100 pieces
MOQ: 70 pcs
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